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CYStech Electronics Corp.
General Purpose PNP Epitaxial Planar Transistor
Spec. No. : C306A3-T Issued Date : 2003.08.26
Revised Date : Page No. : 1/4
BTA1015A3
Description
* The BTA1015A3 is designed for use in driver stage of AF amplifier and general purpose amplification. * High voltage and high current : VCEO=-50V(min), IC=-150mA(max) * High HFE and excellent linearity * Complementary to BTC1815A3.
Symbol
BTA1015A3
Outline
TO-92
BBase CCollector EEmitter
ECB
Absolute Maximum Ratings (Ta=25C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC IB Pd RJA Tj Tstg Limits -50 -50 -5 -150 -50 400 250 125 -55~+125 Unit V V V mA mA mW C/W C C
BTA1015A3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (Ta=25C)
Symbol BVCEO ICBO IEBO *VCE(sat) *VBE(sat) hFE 1 hFE 2 fT Cob Min. -50 70 25 80 Typ. 80 Max. -0.1 -0.1 -0.3 -1.1 400 7 Unit V A A V V MHz pF
Spec. No. : C306A3-T Issued Date : 2003.08.26
Revised Date : Page No. : 2/4
Test Conditions IC=-1mA VCB=-50V VEB=-5V IC=-100mA, IB=-10mA IC=-100mA, IB=-10mA VCE=-6V, IC=-2mA VCE=-6V, IC=-150mA VCE=-10V, IC=-1mA VCB=-10V, f=1MHz
*Pulse Test: Pulse Width 380s, Duty Cycle2%
Classification Of hFE 1
Rank Range O 70~140 Y 120~240 GR 200~400
BTA1015A3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
1000
HFE@VCE=6V
Spec. No. : C306A3-T Issued Date : 2003.08.26
Revised Date : Page No. : 3/4
Saturation Voltage vs Collector Current
1000 Saturation Voltage---(mV)
Current Gain---HFE
VCE(SAT)@IC=10IB
100
100
10 0.1 1 10 100 1000 Collector Current---IC(mA)
10 0.1 1 10 100 1000 Collector Current---IC(mA)
Saturation Voltage vs Collector Current
10000
VBE(SAT)@IC=10IB
Cutoff Frequency vs Collector Current
1 Cutoff Frequency---FT(GHZ)
Saturation Voltage---(mV)
1000
FT@VCE=12V
100 0.1 1 10 100 Collector Current---IC(mA) 1000
0.1 1 10 Collector Current---IC(mA) 100
Power Derating Curve
450 Power Dissipation---PD(mW) 400 350 300 250 200 150 100 50 0 0 50 100 150 Ambient Temperature --- Ta( )
BTA1015A3
CYStek Product Specification
CYStech Electronics Corp.
TO-92 Dimension
Spec. No. : C306A3-T Issued Date : 2003.08.26
Revised Date : Page No. : 4/4
A B
1 2 3
2
Marking:
A1015
3
C
D
H I E F
G
1
Style: Pin 1.Emitter 2.Collector 3.Base 3-Lead TO-92 Plastic Package CYStek Package Code: A3
*: Typical
DIM A B C D E F
Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480
Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76
DIM G H I 1 2 3
Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500 *5 *2 *2
Millimeters Min. Max. 0.36 0.56 *2.54 *1.27 *5 *2 *2
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
* Lead: 42 Alloy ; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTA1015A3
CYStek Product Specification

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